Diffusion dynamic model for study of nonuniform carrier distribution effects in VCSEL

Summary form only given. The important feature of vertical cavity surface emitting lasers (VCSEL) with separate oxide layer is nonuniform carrier distribution in a radial plane due of asymmetric structure. The arising gradient of electron density results in gradients of both temperature and structure refractive index. Hence, it is necessary to take into account transport effects in modeling of VCSELs. We present a new dynamic model including carrier transport effects, change of both the temperature gradient and the refractive index, to solve this problem. In the formulation of such a model it is also important to allow the radial nonuniformity in the process of electron capture into the quantum well (QW). Therefore we represent a QW by several concentric rings located in its plane. This allows us to compute the laser characteristics for each separate ring under the appropriate boundary conditions.