Vmin=0.4 V LSIs are the real with silicon-on-thin-buried-oxide (SOTB) — How is the application with "Perpetuum-Mobile" micro-controller with SOTB?

Author

Sugii, Nobuyuki ; Iwamatsu, Takanori ; Yamamoto, Yusaku ; Makiyama, Hideki ; Shinohara, Hirofumi ; Oda, Hidekazu ; Kamohara, Shiro ; Yamaguchi, Yoshio ; Ishibashi, Koji ; Mizutani, Tomoko ; Hiramoto, Toshiro

Author_Institution

Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near- or sub-V_th operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The “Perpetuum-Mobile” micro-controllers operating at ~0.4 V are expected to be implemented in many applications such as the internet of things.

Keywords

CMOS integrated circuits; SRAM chips; buried layers; large scale integration; low-power electronics; microcontrollers; silicon-on-insulator; Internet of Things; LSIs; SRAM; perrpetuum-mobile microcontroller; ring oscillator circuits; silicon-on-thin-buried-oxide; ultralow-power electronics; ultralow-voltage CMOS; voltage 0.4 V; CMOS integrated circuits; Delays; Energy efficiency; Internet; Random access memory; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716576

Filename

6716576