High-power 1.52-/spl mu/m AlGaInAs strained multi-quantum well lasers

Author

Newell, T.C. ; Varangis, P.M. ; Pease, E. ; Stinz, A. ; Liu, G.T. ; Malloy, K.J. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. The high-power characteristics and recombination mechanisms of compressively strained AlGaInAs QW lasers operating near 1.52 /spl mu/m are investigated. The material structure is grown by molecular beam epitaxy using the digital alloy technique. Three 80 /spl Aring/ AlGaInAs QWs are centered in a 1 /spl mu/m wide waveguide with 50 /spl Aring/ barriers. The QWs are compressively strained at 0.8%. The material was processed into 200 /spl mu/m stripe width broad area lasers that demonstrate an internal loss of 2 cm/sup -1/ and an injection efficiency of 62%. At room temperature, the threshold current density is 410 A/cm/sup 2/ for the best as-cleaved 1-mm cavity length devices.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser cavity resonators; nonradiative transitions; optical losses; quantum well lasers; waveguide lasers; 1.52 micron; AlGaInAs; broad area lasers; compressively strained; high-power characteristics; injection efficiency; internal loss; nonradiative recombination; optimum cavity length; recombination mechanisms; strained multi-quantum well lasers; threshold current density; Optical pulses;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910114

Filename

910114