DocumentCode :
2952750
Title :
SOI and Engineered-SOI, ideal platforms for building MEMS
Author :
Assaderaghi, F.
Author_Institution :
InvenSense Corp., San Jose, CA, USA
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
MEMS (Micro-Electro-Mechanical Systems) have been developed over the past 40 years with ink jet, pressure sensor and accelerometers driving the technology. The last decade has particularly witnessed a tremendous commercial success of MEMS, addressing a plethora of functions such as screen orientation, gesture recognition, timing, voice input and location-based services. This success is the result of continually making these transducers including gyroscopes, accelerometers, resonators, microphones, and magnetometers smaller, lower power, more manufacturable, lower cost, more robust, and more functionally integrated. These characteristics, in turn, have come about by MEMS developers applying and extending the process technology used for fabrication of microelectronics. In fact, the wafer level batch processing has been the foundation of low-cost high-volume manufacturing of MEMS. Although a wide variety of materials are used in building MEMS, silicon has become the dominant choice due to its several useful properties. Single crystalline silicon (SCS) is particularly an excellent structural material for MEMS. SOI and Engineered SOI (ESOI) provide simple and elegant ways of creating transducers from SCS.
Keywords :
elemental semiconductors; micromechanical devices; semiconductor technology; silicon; silicon-on-insulator; transducers; Engineered SOI; MEMS; Si; microelectromechanical systems; single crystalline silicon; transducers; wafer level batch processing; Buildings; Micromechanical devices; Silicon; Thermal stability; Timing; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716582
Filename :
6716582
Link To Document :
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