DocumentCode
2952791
Title
Global variability of UTBB MOSFET in subthreshold
Author
Makovejev, S. ; Esfeh, B. Kazemi ; Andrieu, F. ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, V.
Author_Institution
ICTEAM Inst., Univ. catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
2013
fDate
7-10 Oct. 2013
Firstpage
1
Lastpage
2
Abstract
Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.
Keywords
MOSFET; leakage currents; DIBL; UTBB MOSFET; effective body factor; gate leakage current; global variability; off-state drain current; subthreshold slope; threshold voltage variability; Correlation; Correlation coefficient; Logic gates; MOSFET; Temperature; Temperature dependence; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/S3S.2013.6716585
Filename
6716585
Link To Document