DocumentCode
2952976
Title
Fabrication of Through-Silicon-via (TSV) for ultra-high vacuum atom-optics cell
Author
Ho-Chiao Chuang ; Hsiang-Fu Li ; Yun-Siang Lin ; Yu-Hsin Lin
Author_Institution
Dept. of Mech. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
Atom chips have been proved to generate tight magnetic field to trap atoms under ultra high vacuum environment and thus replaced the big coil apparatus. In our work, the Through-Silicon-Via (TSV) technique has been integrated to the atom chip to make the vacuum system even smaller. The feature of our atom chip with TSV is after thermal cycling process (350°C), the TSV can still pass the helium leaking test and sustain at least 17 Amps current though it without burned out. Thus a vacuum Pyrex glass cell can be anodicially bonded to the front side of atom chip and high currents can be applied from the backside to the front side of the atom chip to create the magnetic trap for atom trapping experiments.
Keywords
three-dimensional integrated circuits; TSV fabrication; atom chip; atom trapping experiments; helium leaking test; magnetic field; magnetic trap; temperature 350 degC; thermal cycling process; through-silicon-via fabrication; ultrahigh vacuum atom-optics cell; ultrahigh vacuum environment; vacuum Pyrex glass cell; Bonding; Copper; Electrical resistance measurement; Glass; Substrates; Through-silicon vias; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411540
Filename
6411540
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