Two-dimensional folded Hall sensor fabricated in standard CMOS technology

This paper investigates a two-dimensional (2-D) differential folded Hall device (FHD) fabricated by standard 0.35-μm CMOS process. To minimize the cross-coupling noise, the proposed Hall device is laterally folded to shorten the effective conduction length. According to measurement results, the magnetoresistor (MR) exhibits with good linearity and high cross-coupling signal. Cross-coupling signal is easily cancelled since the signal is approximately one fifth of the related measured Hall voltage. The measured optimum S_RI, minimum mean nonlinearity error (NLE) and minimum offset are 0.056 V/AT, 31.34%, and 17.69 mV, respectively, at a bias current of 10 mA excited with a supply voltage of 2.7 volts.