Optical diagnostic of silicon carbide based on differential reflectance spectroscopy

Author

Shturbin, A.V. ; Titkov, Ilya E. ; Panevin, Vadim Yu ; Vorobjev, Leonid E. ; Witman, R.F.

Author_Institution

St. Petersburg State Tech. Univ., Russia

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. A simple non-destructive method for characterising SiC samples (Lely-crystals, CREE-substrates, and epitaxial films) is presented. The observed ultraviolet differential reflection spectra of SiC samples were compared with a pure Lely-crystal (model sample) to estimate the structural quality of the sample. The method presented is based on a differential study of ultraviolet reflection spectra of SiC films in comparison with a perfect Lely-crystal.

Keywords

IV-VI semiconductors; carrier density; crystal structure; electron mobility; reflectivity; semiconductor epitaxial layers; semiconductor thin films; silicon compounds; spectral line broadening; spectral line shift; substrates; ultraviolet spectra; CREE-substrates; Lely-crystals; SiC; SiC films; SiC samples; differential reflectance spectroscopy; differential study; epitaxial films; model sample; optical diagnostic; perfect Lely-crystal; pure Lely-crystal; sample; simple nondestructive method; structural quality; ultraviolet differential reflection spectra; ultraviolet reflection spectra; Absorption; Optical films; Optical pulses; Optical reflection; Optical sensors; Optimized production technology; Petroleum; Reflectivity; Silicon carbide; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910130

Filename

910130