Title :
Fabrication of quantum Hall devices for low magnetic fields
Author :
Pierz, K. ; Schumacher, B.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
The quantized Hall resistance of a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures is used for the realization of the unit of resistance. With respect to an application in magnets with lower fields, we have produced such devices with carrier concentrations even below 3/spl middot/10/sup 15/ m/sup -2/ and checked their metrological quality.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; carrier density; electric resistance measurement; gallium arsenide; measurement standards; molecular beam epitaxial growth; quantum Hall effect; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; AlGaAs-GaAs; AlGaAs/GaAs heterostructures; MBE; carrier concentration; low magnetic fields; metrological quality; quantized Hall resistance; quantum Hall devices fabrication; resistance unit; two-dimensional electron gas; Conductivity; Electrical resistance measurement; Electrons; Fabrication; Gallium arsenide; Magnetic field measurement; Magnetic fields; Magnets; Molecular beam epitaxial growth; Tin;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699940
