• DocumentCode
    2953451
  • Title

    Diaphragm-based microsystems using thin film silicon carbide

  • Author

    Zorman, C.A. ; Barnes, A.C. ; Feng, P.X.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2012
  • fDate
    28-31 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Silicon carbide (SiC) is a leading material for both semiconductor devices and harsh environment micro- and nano-electromechanical systems (MEMS/NEMS) due to a combination of exceptional electrical, mechanical and chemical properties. SiC is also an excellent structural material for micromechanical transducers because of its high Young´s modulus and mechanical strength. Suspended thin film diaphragms have been used in a wide range of applications, ranging from fundamental materials characterization to structural elements in high temperature pressure transducers. This paper reviews some of our efforts to develop SiC as a structural material for diaphragm-based MEMS, highlighting recent advances by our group in developing these structures for use in electromechanical microsensors and microactuators.
  • Keywords
    Young´s modulus; diaphragms; microactuators; microsensors; nanosensors; pressure transducers; silicon compounds; suspensions (mechanical components); temperature sensors; thin film sensors; wide band gap semiconductors; MEMS-NEMS; SiC; Young´s modulus; diaphragm-based microsystem; electromechanical microsensor; mechanical strength; microactuator; microelectromechanical system; micromechanical transducer; nanoelectromechanical system; semiconductor device; suspended thin film diaphragm; temperature pressure transducer; Films; Micromechanical devices; Residual stresses; Sensors; Silicon; Silicon carbide; Actuators; Diaphragm; MEMS; NEMS; Resonators; Sensors; Silicon Carbide (SiC); Thin Film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2012 IEEE
  • Conference_Location
    Taipei
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4577-1766-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2012.6411566
  • Filename
    6411566