DocumentCode
2953451
Title
Diaphragm-based microsystems using thin film silicon carbide
Author
Zorman, C.A. ; Barnes, A.C. ; Feng, P.X.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
Silicon carbide (SiC) is a leading material for both semiconductor devices and harsh environment micro- and nano-electromechanical systems (MEMS/NEMS) due to a combination of exceptional electrical, mechanical and chemical properties. SiC is also an excellent structural material for micromechanical transducers because of its high Young´s modulus and mechanical strength. Suspended thin film diaphragms have been used in a wide range of applications, ranging from fundamental materials characterization to structural elements in high temperature pressure transducers. This paper reviews some of our efforts to develop SiC as a structural material for diaphragm-based MEMS, highlighting recent advances by our group in developing these structures for use in electromechanical microsensors and microactuators.
Keywords
Young´s modulus; diaphragms; microactuators; microsensors; nanosensors; pressure transducers; silicon compounds; suspensions (mechanical components); temperature sensors; thin film sensors; wide band gap semiconductors; MEMS-NEMS; SiC; Young´s modulus; diaphragm-based microsystem; electromechanical microsensor; mechanical strength; microactuator; microelectromechanical system; micromechanical transducer; nanoelectromechanical system; semiconductor device; suspended thin film diaphragm; temperature pressure transducer; Films; Micromechanical devices; Residual stresses; Sensors; Silicon; Silicon carbide; Actuators; Diaphragm; MEMS; NEMS; Resonators; Sensors; Silicon Carbide (SiC); Thin Film;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411566
Filename
6411566
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