Title :
Study and design of integrated crystal oscillator
Author :
Zhou, Shao-Hua ; Zeng, Jian-Ping ; Xiong, Qi ; Zeng, Yun
Author_Institution :
Hunan Vocational Coll. of Eng. & Technol., Changsha, China
Abstract :
A novel structure of the integrated cascode crystal oscillator is presented by analyzing the discrete oscillator circuits in this paper. A temperature-independent voltage source, which is suitable for integrated circuits, was used for biasing of the buffer amplifier, while eliminating the bypass capacitor. Both the oscillator circuits and the buffer amplifier use the common divider resistance. The improvements reduce the start-up time of the oscillator and the area of the layout. With the library of chrt.35dg_ SiGe, we simulate the oscillator circuits by the spectre simulation tools of the Cadence. The simulations show that: when the supply voltage is 2.7 V, the frequency, the start-up time and the peak-to-peak value of the output of the oscillator are 12.8 MHz, 1.3 mS and 0.8 V respectively. And the SSB (Single Side Band) phase noise is -142 dBc/Hz at 1 kHz, -150 dBc/Hz at 10 kHz. The power consumption of the circuits is less than 2.7 mW.
Keywords :
Ge-Si alloys; amplifiers; buffer circuits; circuit simulation; crystal oscillators; integrated circuit layout; phase noise; Cadence; SiGe; buffer amplifier; bypass capacitor; common divider resistance; discrete oscillator circuits; frequency 1 kHz; frequency 10 kHz; frequency 12.8 MHz; integrated cascode crystal oscillator; integrated circuits; phase noise; power consumption; spectre simulation tools; start-up time; temperature-independent voltage source; time 1.3 ms; voltage 2.7 V; Amplitude modulation; Capacitors; Circuit simulation; Frequency; Germanium silicon alloys; Libraries; Phase noise; Silicon germanium; Voltage; Voltage-controlled oscillators; Cascode crystal oscillator; Integrated circuits; Quartz crystal oscillator; Voltage source;
Conference_Titel :
Wireless Communications & Signal Processing, 2009. WCSP 2009. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-4856-2
Electronic_ISBN :
978-1-4244-5668-0
DOI :
10.1109/WCSP.2009.5371715