DocumentCode :
2953869
Title :
A low-noise 900 MHz VCO in 0.6 /spl mu/m CMOS
Author :
Chan-Hong Park ; Beomsup Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear :
1998
fDate :
11-13 June 1998
Firstpage :
28
Lastpage :
29
Abstract :
This paper presents a low noise 900 MHz voltage controlled oscillator (VCO) implemented in 0.6 /spl mu/m CMOS technology. The VCO based on a 4-stage ring oscillator adopted a new differential delay cell to reduce the phase noise. The measured phase noise is -101 dBc/Hz at 100 kHz offset from the center frequency and comparable to that of LC based integrated oscillators. The measured value is smaller than any other previously reported ones in the ring oscillator VCO´s. A prototype frequency synthesizer with this VCO shows phase noise of -117 dBc/Hz at 100 kHz offset. The VCO operates from 750 MHz to 1.2 GHz with a single 3 volt power supply.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.6 micron; 3 V; 4-stage ring oscillator; 750 MHz to 1.2 GHz; 900 MHz; CMOS technology; differential delay cell; low-noise VCO; phase noise reduction; prototype frequency synthesizer; voltage controlled oscillator; CMOS technology; Delay; Frequency measurement; Frequency synthesizers; Noise measurement; Phase measurement; Phase noise; Prototypes; Ring oscillators; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4766-8
Type :
conf
DOI :
10.1109/VLSIC.1998.687991
Filename :
687991
Link To Document :
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