DocumentCode :
29547
Title :
Fully Monolithic BiCMOS Reconfigurable Power Amplifier for Multi-Mode and Multi-Band Applications
Author :
Ming-Lung Lee ; Chong-Yi Liou ; Wei-Ting Tsai ; Chun-Yu Lou ; Hao-Lun Hsu ; Shau-Gang Mao
Author_Institution :
Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
63
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
614
Lastpage :
624
Abstract :
A power amplifier (PA) supporting wideband code division multiple access, long-term evolution (LTE), and wireless local area network applications has been implemented in 0.18- μm SiGe BiCMOS technology. The PA integrates a tunable input matching network, a broadband output matching network, and adaptive bias circuits in a single chip to achieve high linearity and high power in different modulation schemes and operating bands. The three-stage PA adopts a differential-type configuration without using through-silicon-via technology to deliver 4 1.3-42 dB of gain and 28.2-28.6 dBm of 1-dB compression output power with a 20.8-27.6% power-added efficiency (PAE) at 1.85-2.5 GHz. To further validate the usefulness of the proposed PA, the envelope-tracking PA is designed to improve the PAE by 6.5% within the linearity specification of a 24.7-dBm average output power and a -33-dBc adjacent channel leakage ratio for 2.35-GHz 16 quadrature-amplitude-modulation time-division LTE signal with 20-MHz bandwidth.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; UHF integrated circuits; UHF power amplifiers; code division multiple access; quadrature amplitude modulation; wireless LAN; PAE; QAM; SiGe; WCDMA; adaptive bias circuits; bandwidth 10 MHz; broadband output matching network; differential-type configuration; efficiency 20.8 percent to 27.6 percent; efficiency 6.5 percent; envelope-tracking PA; frequency 1.85 GHz to 2.5 GHz; fully monolithic BiCMOS reconfigurable power amplifier; gain 41.3 dB to 42 dB; long-term evolution; multiband applications; multimode applications; operating bands; power-added efficiency; quadrature-amplitude-modulation time-division LTE signal; size 0.18 mum; tunable input matching network; wideband code division multiple access; wireless local area network applications; Bandwidth; Capacitors; Gain; Impedance matching; Ports (Computers); Switches; Tuning; Adaptive bias circuit (ABC); broadband matching network; envelope-tracking (ET) circuit; long-term evolution (LTE); multi-band; multi-mode; power amplifier (PA); tunable matching network; wideband code division multiple access (WCDMA); wireless local area network (WLAN);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2014.2388225
Filename :
7015627
Link To Document :
بازگشت