Wavelength conversion and light amplification in silicon waveguides

Author

Jalali, B. ; Raghunathan, V. ; Boyraz, O. ; Claps, R. ; Dimitropoulos, D.

Author_Institution

UCLA, Los Angeles, CA, USA

fYear

2004

fDate

29 Sept.-1 Oct. 2004

Firstpage

10

Lastpage

12

Abstract

This study demonstrates wavelength conversion and intrinsic Raman amplification. This work shows that phase matching is required to achieve high conversion efficiencies. In addition, reduction of waveguide cross section, while maintaining low propagation loss, is highly desirable for both wavelength conversion and optical amplification. The resulting increase in light intensity enhances the Raman interaction and the reduction in free carrier lifetime diminishes the two-photon absorption-induced free carrier losses.

Keywords

carrier lifetime; optical losses; optical phase matching; optical waveguides; optical wavelength conversion; silicon; stimulated Raman scattering; two-photon processes; Raman interaction; Si; free carrier lifetime; free carrier losses; intrinsic Raman amplification; light amplification; low propagation loss; phase matching; silicon waveguides; stimulated Raman scattering; two-photon absorption; waveguide cross section; wavelength conversion; Fiber nonlinear optics; Optical films; Optical pumping; Optical scattering; Optical waveguides; Optical wavelength conversion; Phonons; Raman scattering; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2004. First IEEE International Conference on

Print_ISBN

0-7803-8474-1

Type

conf

DOI

10.1109/GROUP4.2004.1416636

Filename

1416636