DocumentCode
2955183
Title
A fast and safe discharge circuit for implantable stimulators using a depletion transistor
Author
Liu, Xiao ; Demosthenous, Andreas
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
fYear
2009
fDate
26-28 Nov. 2009
Firstpage
173
Lastpage
176
Abstract
Maintaining charge balance is very important for chronic implantable stimulation applications. Passive discharge is a simple and reliable method for achieving charge balance. However, conventional passive discharge methods via a resistor or a MOS transistor require long discharge cycles, hence relatively low stimulation rates. We present a new fail-safe passive discharge circuit employing a depletion transistor which provides fast discharge, at least 50% faster than the other methods. A stimulator circuit was simulated in a 0.6-¿m silicon-on-insulator CMOS process to verify the new method. The circuit design and simulation results are presented.
Keywords
CMOS integrated circuits; passive networks; prosthetics; silicon-on-insulator; MOS transistor; charge balance; depletion transistor; discharge circuit; implantable stimulators; passive discharge; silicon-on-insulator CMOS process; CMOS process; Circuit simulation; Electrodes; Energy consumption; Impedance; Resistors; Silicon on insulator technology; Switches; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Biomedical Circuits and Systems Conference, 2009. BioCAS 2009. IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4244-4917-0
Electronic_ISBN
978-1-4244-4918-7
Type
conf
DOI
10.1109/BIOCAS.2009.5372057
Filename
5372057
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