• DocumentCode
    2955183
  • Title

    A fast and safe discharge circuit for implantable stimulators using a depletion transistor

  • Author

    Liu, Xiao ; Demosthenous, Andreas

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • fYear
    2009
  • fDate
    26-28 Nov. 2009
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    Maintaining charge balance is very important for chronic implantable stimulation applications. Passive discharge is a simple and reliable method for achieving charge balance. However, conventional passive discharge methods via a resistor or a MOS transistor require long discharge cycles, hence relatively low stimulation rates. We present a new fail-safe passive discharge circuit employing a depletion transistor which provides fast discharge, at least 50% faster than the other methods. A stimulator circuit was simulated in a 0.6-¿m silicon-on-insulator CMOS process to verify the new method. The circuit design and simulation results are presented.
  • Keywords
    CMOS integrated circuits; passive networks; prosthetics; silicon-on-insulator; MOS transistor; charge balance; depletion transistor; discharge circuit; implantable stimulators; passive discharge; silicon-on-insulator CMOS process; CMOS process; Circuit simulation; Electrodes; Energy consumption; Impedance; Resistors; Silicon on insulator technology; Switches; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Biomedical Circuits and Systems Conference, 2009. BioCAS 2009. IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-4917-0
  • Electronic_ISBN
    978-1-4244-4918-7
  • Type

    conf

  • DOI
    10.1109/BIOCAS.2009.5372057
  • Filename
    5372057