DocumentCode
2955185
Title
Terahertz emitting devices based on dopant transitions in silicon
Author
Kolodzey, James ; Lv, Pengcheng ; Troeger, Ralph Thomas ; Kim, Sangcheol
Author_Institution
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
37
Lastpage
39
Abstract
This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.
Keywords
boron; electroluminescence; elemental semiconductors; impurity states; silicon; submillimetre wave devices; 4.2 K; THz emitters; boron doped sample; dopant transitions; doped silicon devices; electroluminescence; radiative impurity transitions; terahertz emitting devices; Alloying; Boron; Current measurement; Electroluminescence; Impurities; Oscilloscopes; Probes; Pulse measurements; Silicon devices; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416645
Filename
1416645
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