Title :
Intense room temperature near infrared emission from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon
Author :
Zhang, J.G. ; Cheng, B.W. ; Gao, J.H. ; Yu, J.Z. ; Wang, Q.M.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Intense near infrared emission was observed from Al3+ and Yb3+ ions co-implanted SiO2 film on silicon. It was found that the addition of Al3+ ions could remarkably improve the photoluminescence efficiency of Yb3+-implanted SiO2 film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.
Keywords :
aluminium; infrared spectra; photoluminescence; silicon compounds; thin films; ytterbium; 20 degC; Al3+ ions; Si; SiO2:Al,Yb; Yb3+ ions; coimplanted SiO2 film; intense room temperature emission; near infrared emission; photoluminescence; trivial temperature quenching factor; Annealing; Laser excitation; Optical films; Optical pumping; Optical saturation; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Temperature;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416654
