Title :
RF collisional sheath potential profile measurement
Author :
Kamal, Husain A.
Author_Institution :
Dept. of Electr. Eng., Kuwait Univ., Safat, Kuwait
Abstract :
Radio frequency (rf) discharges are now widely used in development and manufacturing of thin-film devices and materials. Different time-average and dynamic models have been developed to describe the characteristics of rf sheaths. There have been only a few attempts to measure the sheath profile in high pressure. Moreover, these measurements were not compared with any existing model. In this paper, Argon plasma is sustained at a neutral pressure of 0.1Torr. The time-average potential profile is measured in front of the plate with the emissive probe, using the inflection point method in the limit of zero emission. A comparison is made between the measured sheath thickness and the calculated sheath thickness from the dynamic models.
Keywords :
argon; discharges (electric); plasma collision processes; plasma sheaths; Argon plasma; RF sheath; collisional sheath potential profile measurement; dynamic model; emissive probe; inflection point method; radio frequency discharge; sheath thickness; thin-film device; time-average model; zero emission limit; Argon; Manufacturing; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sheaths; Pressure measurement; Radio frequency; Thin film devices;
Conference_Titel :
Microelectronics, The 14th International Conference on 2002 - ICM
Print_ISBN :
0-7803-7573-4
DOI :
10.1109/ICM-02.2002.1161518
