• DocumentCode
    2955442
  • Title

    Luminescence properties of Er3+-doped SiOx films containing amorphous Si nanoparticles

  • Author

    Chen, W.D. ; Chen, C.Y.

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.
  • Keywords
    amorphous state; erbium; infrared spectra; nanostructured materials; optical films; photoluminescence; silicon compounds; thin films; Er3+ emission; Er3+-doped SiOx films; Si nanoparticles; SiO2:Er; amorphous nanoparticles; infrared spectra; luminescence properties; photoluminescence; Amorphous materials; Annealing; Crystallization; Erbium; Luminescence; Nanoparticles; Plasma temperature; Semiconductor films; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416658
  • Filename
    1416658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2955442