DocumentCode :
2955505
Title :
MMIC process for integrated power converters
Author :
Pereira, Antonio ; Albahrani, Sayed ; Parker, Anthony ; Town, Graham ; Heimlich, Michael
Author_Institution :
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia
fYear :
2013
fDate :
17-19 April 2013
Firstpage :
277
Lastpage :
279
Abstract :
Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence on off state bias, and current collapse at high temperatures. The degradation in ON resistance and current collapse can severely impact the efficiency of switching circuits fabricated in these processes.
Keywords :
III-V semiconductors; MMIC; gallium compounds; power convertors; radiofrequency integrated circuits; switching circuits; wide band gap semiconductors; GaN; ON resistance dependence; RF MMIC fabrication process technologies; current collapse; integrated switching power converters; off state bias; pulsed IV characterization; Field effect transistors; Gallium arsenide; Gallium nitride; MMICs; Resistance; Switches; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON Spring Conference, 2013 IEEE
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4673-6347-1
Type :
conf
DOI :
10.1109/TENCONSpring.2013.6584455
Filename :
6584455
Link To Document :
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