A 9 mW 900 MHz CMOS LNA with mesh arrayed MOSFETs

Author

Hayashi, G. ; Kimura, H. ; Simomura, H. ; Matsuzawa, A.

Author_Institution

Corp. Semicond. Dev. Div., Matsuchita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1998

fDate

11-13 June 1998

Firstpage

84

Lastpage

85

Abstract

A 900 MHz Low Noise Amplifier (LNA) has been developed using 0.35 /spl mu/m standard CMOS technology. MA-MOS (Mesh-Arrayed MOSFET) is introduced for excellent high-frequency performance without salicide technology. The substrate power loss was analyzed and minimized by reducing parasitic elements for a low-noise and low-power operation. As a result, the LNA realized a minimum noise figure (NFmin) of 1.8 dB, a forward gain of 14.8 dB and IIP3 of -2.5 dBm with a low-power consumption of only 9 mW from a 3 V power supply.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; losses; 0.35 micron; 1.8 dB; 14.8 dB; 3 V; 9 mW; 900 MHz; CMOS LNA; UHF IC; low noise amplifier; low-power operation; mesh arrayed MOSFETs; parasitic elements reduction; substrate power loss; Arthritis; Bonding; CMOS technology; Equivalent circuits; Gallium arsenide; MOSFETs; Noise figure; Performance loss; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4766-8

Type

conf

DOI

10.1109/VLSIC.1998.688010

Filename

688010