Title :
Application of GaAs and InP-based HEMT technology to MILSATCOM systems
Author :
Smith, P.M. ; Chao, P.C. ; Ho, P. ; Duh, K.H.G. ; Liu, S.M.J. ; Creamer, C.T. ; Kopp, W.F. ; Komiak, J.J. ; Ballingall, J.M. ; Swanson, A.W.
Author_Institution :
Lockheed Martin Electron. Lab., Syracuse, NY, USA
Abstract :
The development in our laboratory of microwave high electron mobility transistors (HEMTs) to enhance the front-end performance of space and terrestrial MILSATCOM systems is described. The application of two HEMT types, the GaAs-based PHEMT and the InP HEMT, to EHF receivers and transmitters is reviewed
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; microwave receivers; military communication; radio transmitters; satellite communication; EHF receivers; EHF transmitters; GaAs; HEMT; HEMT technology; III-V semiconductors; InP; MILSATCOM systems; MMIC; PHEMT; front-end performance; microwave applications; microwave high electron mobility transistors; space MILSATCOM systems; terrestrial MILSATCOM systems; Fabrication; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; MMICs; Noise figure; PHEMTs;
Conference_Titel :
Military Communications Conference, 1995. MILCOM '95, Conference Record, IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2489-7
DOI :
10.1109/MILCOM.1995.483561
