Title :
Erbium-silicon-oxide thin films formed by sol-gel method
Author :
Masaki, K. ; Isshi, H. ; Kimura, T.
Author_Institution :
Dept. of Electron. Eng., Electro-Commun. Univ., Tokyo, Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
This paper presents strong and sharp Er-related 1.53 μm photoluminescence characteristics and crystalline properties of Er-Si-O thin films formed by sol-gel method.
Keywords :
erbium compounds; photoluminescence; silicon compounds; sol-gel processing; thin films; 1.53 mum; Er-Si-O; crystalline properties; erbium-silicon-oxide thin films; photoluminescence; sol-gel method; Annealing; Atom optics; Crystallization; Erbium; Optical films; Optical waveguides; Photoluminescence; Photonic crystals; Temperature; Transistors;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416674
