DocumentCode
2955792
Title
Erbium-silicon-oxide thin films formed by sol-gel method
Author
Masaki, K. ; Isshi, H. ; Kimura, T.
Author_Institution
Dept. of Electron. Eng., Electro-Commun. Univ., Tokyo, Japan
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
95
Lastpage
97
Abstract
This paper presents strong and sharp Er-related 1.53 μm photoluminescence characteristics and crystalline properties of Er-Si-O thin films formed by sol-gel method.
Keywords
erbium compounds; photoluminescence; silicon compounds; sol-gel processing; thin films; 1.53 mum; Er-Si-O; crystalline properties; erbium-silicon-oxide thin films; photoluminescence; sol-gel method; Annealing; Atom optics; Crystallization; Erbium; Optical films; Optical waveguides; Photoluminescence; Photonic crystals; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416674
Filename
1416674
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