• DocumentCode
    2955805
  • Title

    Low temperature formation of β--FeSi2 polycrystalline by pulsed laser deposition and thermal annealing

  • Author

    Sugawara, Hirohm ; Nakamura, Shingo ; Oouchi, Masaydu ; Kumura, Yui ; Shishido, Takenobu ; Kishi, Masato ; Tsuchiya, Masahiro

  • Author_Institution
    Dept. of Electron. Syst. Eng., Tokyo Metropolitan Inst. of Technol., Japan
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    98
  • Lastpage
    100
  • Abstract
    Polycrystalline β-FeSi2 droplets were successfully formed by an exceptionally low temperature process: the room temperature pulsed laser deposition and a 350 °C post-annealing. Their evidences have been derived by microscopic Raman spectroscopy and TEM observation.
  • Keywords
    Raman spectroscopy; annealing; iron compounds; optical materials; pulsed laser deposition; semiconductor growth; transmission electron microscopy; β--FeSi2 polycrystalline; 20 degC; 350 degC; FeSi2; TEM; microscopic Raman spectroscopy; pulsed laser deposition; thermal annealing; Annealing; Iron; Optical pulses; Optical scattering; Pulsed laser deposition; Raman scattering; Spectroscopy; Substrates; Temperature; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416675
  • Filename
    1416675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2955805