Title :
Low temperature formation of β--FeSi2 polycrystalline by pulsed laser deposition and thermal annealing
Author :
Sugawara, Hirohm ; Nakamura, Shingo ; Oouchi, Masaydu ; Kumura, Yui ; Shishido, Takenobu ; Kishi, Masato ; Tsuchiya, Masahiro
Author_Institution :
Dept. of Electron. Syst. Eng., Tokyo Metropolitan Inst. of Technol., Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Polycrystalline β-FeSi2 droplets were successfully formed by an exceptionally low temperature process: the room temperature pulsed laser deposition and a 350 °C post-annealing. Their evidences have been derived by microscopic Raman spectroscopy and TEM observation.
Keywords :
Raman spectroscopy; annealing; iron compounds; optical materials; pulsed laser deposition; semiconductor growth; transmission electron microscopy; β--FeSi2 polycrystalline; 20 degC; 350 degC; FeSi2; TEM; microscopic Raman spectroscopy; pulsed laser deposition; thermal annealing; Annealing; Iron; Optical pulses; Optical scattering; Pulsed laser deposition; Raman scattering; Spectroscopy; Substrates; Temperature; Transmission electron microscopy;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416675
