Title :
Two-dimensional numerical simulation of metal-semiconductor-metal photodetector structures
Author_Institution :
Coll. of Eng., King Saud Univ., Riyadh, Saudi Arabia
Abstract :
A two-dimensional simulation program, based on the drift-diffusion model, is developed. The program numerically solves the basic semiconductor equations. The model is applied to simulate the dark current voltage characteristics of a planar metal-semiconductor-metal photodetectors (MSM).
Keywords :
dark conductivity; digital simulation; metal-semiconductor-metal structures; photodetectors; semiconductor device models; MSM; dark current voltage characteristics; drift-diffusion model; metal-semiconductor-metal photodetector; numerical simulation; semiconductor equations; simulation program; Charge carrier processes; Current-voltage characteristics; Electron mobility; Electrostatics; Fingers; Nonlinear equations; Numerical simulation; Photodetectors; Poisson equations; Schottky barriers;
Conference_Titel :
Microelectronics, The 14th International Conference on 2002 - ICM
Print_ISBN :
0-7803-7573-4
DOI :
10.1109/ICM-02.2002.1161545
