• DocumentCode
    2955926
  • Title

    Strain of the micro-sized cone-shape GeSi alloy film determined by Raman scattering

  • Author

    Chia, C.-T. ; Chen, L.J. ; Mashano, V.I. ; Cheng, H.H.

  • Author_Institution
    Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    107
  • Lastpage
    109
  • Abstract
    We present the micro-Raman study of curved GexSi1-x/GeySi1-y heterostructure, and found the strain of the curved thin layer is proportional to the curvature, i.e. inversely proportional to the diameter.
  • Keywords
    Ge-Si alloys; Raman spectra; internal stresses; optical films; semiconductor heterojunctions; semiconductor materials; GeSi; GeSi alloy film strain; Raman scattering; Capacitive sensors; Germanium silicon alloys; Optical buffering; Optical films; Optical microscopy; Optical scattering; Raman scattering; Scanning electron microscopy; Silicon germanium; Strain measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416680
  • Filename
    1416680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2955926