Title :
Experimental study of total ionizing dose radiation effects on MOS capacitor
Author :
Sharashar, Karam ; Kayed, Somaya
Author_Institution :
National Center for Radiat. Res. & Technol., Cairo, Egypt
Abstract :
The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor wafer samples that are locally fabricated for this purpose. The oxide was prepared by dry-wet-dry oxidation technique at 1000 °C using N-type Si substrate of about 3 Ω.cm. The samples have been exposed to irradiation at different doses from 1Krad(SiO2) up to 1Mrad(SiO2) using two different Gamma sources for high and low radiation rates, a shift in C-V curves as a flat-band shifted from 0.3 up to 2.5V and interface states of irradiated samples increased from 2.45*1012 up to 250*1012 eV-1 cm-2. Shelf annealing effects have also been investigated.
Keywords :
MOS capacitors; gamma-ray effects; 0.3 to 2.5 V; 1000 C; 1E3 to 1E6 rad; C-V curves; MOS capacitor; SiO2; dry-wet-dry oxidation technique; interface states; ionizing dose radiation; radiation rates; shelf annealing effects; Capacitance; Capacitance-voltage characteristics; Electron traps; Ionizing radiation; MOS capacitors; MOS devices; Radiation effects; Rough surfaces; Surface roughness; Threshold voltage;
Conference_Titel :
Microelectronics, The 14th International Conference on 2002 - ICM
Print_ISBN :
0-7803-7573-4
DOI :
10.1109/ICM-02.2002.1161546
