Title :
High responsivity, high speed InP-based inverted MSM photodetectors
Author :
Vendier, Olivier ; Jokerst, Nan Marie ; Leavitt, Richard P.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Metal-semiconductor-metal (MSM) photodetectors detecting at 1.3 and 1.55 μm are attractive for integration in OEIC receiver circuits because of their low capacitance per unit area. We report herein for the first time MSMs with high responsivities at 1.3 μm which have fingers on the bottom of the devices, namely, an inverted MSM (IMSM)
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; infrared detectors; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.3 mum; 1.55 mum; InP; MSM photodetectors; OEIC receiver circuits; high responsivities; high responsivity; high speed InP-based inverted MSM photodetectors; integration; inverted MSM; low capacitance; Bonding; Electrodes; Etching; Fingers; Gold; Indium compounds; Indium gallium arsenide; Indium phosphide; Photodetectors; Shadow mapping;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484490
