Title :
Behavior model of a CMOS process compatible photo-diode
Author :
Gao, Peng ; Chen, HongDa ; Mao, Luhong
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
29 Sept.-1 Oct. 2004
Abstract :
A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment.
Keywords :
CMOS analogue integrated circuits; integrated optoelectronics; photoconductivity; photodiodes; semiconductor device models; CMOS process; CMOS receiver circuit; behavior model; junction capacitance; photocurrent; photodiode; CMOS process; Circuit simulation; Diodes; Optical feedback; Optical receivers; Optical sensors; Optical signal processing; Optoelectronic devices; Power system modeling; Semiconductor device modeling;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416682
