Uniform arrays of high responsivity resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistors

Author

Sjölund, O. ; Ghisoni, M. ; Larsson, A.

Author_Institution

Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

27

Abstract

In conclusion we have presented an RCE-HPT heterojunction phototransistor with an MQW absorber that is tolerant to inhomogeneous and homogeneous variations in layer thicknesses. Arrays show good uniformity as well as record high responsivities. The standard deviation of a typical array is 1.1 nm in resonant wavelength and 13.3 A/W in peak responsivity. This is significantly smaller than the FWHM optical bandwidth of 7 nm and about 8% of the average peak responsivity of 163 A/W at 10 μW optical input

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light absorption; phototransistors; semiconductor heterojunctions; semiconductor quantum wells; 10 muW; FWHM optical bandwidth; InGaAs/AlGaAs heterojunction phototransistors; MQW absorber; average peak responsivity; good uniformity; high responsivity; homogeneous variations; inhomogeneous variations; layer thicknesses; optical input; peak responsivity; record high responsivities; resonant cavity enhanced; resonant wavelength; standard deviation; uniform arrays; Absorption; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Optical arrays; Optical modulation; Phototransistors; Resonance; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484491

Filename

484491