Title :
Uniform arrays of high responsivity resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistors
Author :
Sjölund, O. ; Ghisoni, M. ; Larsson, A.
Author_Institution :
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
In conclusion we have presented an RCE-HPT heterojunction phototransistor with an MQW absorber that is tolerant to inhomogeneous and homogeneous variations in layer thicknesses. Arrays show good uniformity as well as record high responsivities. The standard deviation of a typical array is 1.1 nm in resonant wavelength and 13.3 A/W in peak responsivity. This is significantly smaller than the FWHM optical bandwidth of 7 nm and about 8% of the average peak responsivity of 163 A/W at 10 μW optical input
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light absorption; phototransistors; semiconductor heterojunctions; semiconductor quantum wells; 10 muW; FWHM optical bandwidth; InGaAs/AlGaAs heterojunction phototransistors; MQW absorber; average peak responsivity; good uniformity; high responsivity; homogeneous variations; inhomogeneous variations; layer thicknesses; optical input; peak responsivity; record high responsivities; resonant cavity enhanced; resonant wavelength; standard deviation; uniform arrays; Absorption; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Optical arrays; Optical modulation; Phototransistors; Resonance; Stimulated emission; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484491
