Title :
MicroRaman study of Ge/Si quantum rings and dots
Author :
Mashano, V.I. ; Cheng, H.H. ; Chen, Ling-Jyh ; Chia, C.T.
Author_Institution :
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
The fabrication and optical measurement of Ge/Si nanostructure is presented. Atomic force microscopy (AFM) is employed to probe the surface morphology. It shows both quantum dots (QDs) and ring shape Ge nanostructure (quantum ring QRs). MicroRaman is performed to characterize the strain and composition QD and QR.
Keywords :
Raman spectra; atomic force microscopy; elemental semiconductors; germanium; nanostructured materials; nanotechnology; semiconductor quantum dots; silicon; surface morphology; Ge-Si; Ge/Si quantum dots; Ge/Si quantum rings; atomic force microscopy; microRaman; nanostructure; strain; surface morphology; Atomic force microscopy; Capacitive sensors; Optical buffering; Optical devices; Quantum dots; Shape; Solids; Surface morphology; Temperature; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416683
