Title :
Silicon hetero-interface photodetector
Author :
Hawkins, Aaron R. ; Reynolds, Tom ; England, Derek R. ; Babic, Dubravko I. ; Mondry, Mark ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We propose and demonstrate a novel avalanche photodetector that uses separate InGaAs absorption and Si multiplication regions fabricated by wafer fusion. Directly integrating InGaAs and silicon layers in an avalanche photodetector combines the high long-wavelength absorption capabilities of InGaAs and the avalanche multiplication properties of Si. The large ratio of electron and hole ionization coefficients of silicon results in lower noise and a higher gain bandwidth product than achievable using III-V semiconductors in avalanche regions
Keywords :
avalanche photodiodes; elemental semiconductors; integrated circuit technology; optical fabrication; optical films; photodetectors; semiconductor heterojunctions; semiconductor thin films; silicon; wafer bonding; III-V semiconductors; InGaAs; InGaAs absorption regions; Si; Si multiplication regions; avalanche multiplication properties; avalanche photodetector; avalanche regions; electron ionization coefficients; high long-wavelength absorption capabilities; higher gain bandwidth product; hole ionization coefficients; lower noise; silicon hetero-interface photodetector; silicon layers i; wafer fusion; Absorption; Bandwidth; Charge carrier processes; III-V semiconductor materials; Indium gallium arsenide; Ionization; Photodetectors; Semiconductor device noise; Signal to noise ratio; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484492
