Novel InGaAsP/AlGaAs multiple-wavelength electrically pumped vertical cavity lasers emitting in the 1.5 /spl mu/m waveband

Summary form only. Multiple wavelength VCSELs emitting in the 1.5 /spl mu/m waveband may become light sources of preference in future WDM metropolitan and local area networks. In this paper we present a novel approach to the multiple wavelength VCSEL fabrication which is based on the introduction of air-gaps in double fused VCSEL structures. The fabrication process of these devices is similar to the processing of double fused VCSELs with in-situ built-in lateral optical and current confinement. The only difference is that after first p-p fusion and InP substrate removal, we form a recess by selectively etching part of the InP-based structure. This material is grown by gas source MBE and consists of six InGaAsP strained quantum wells that are centered in a 3/2 /spl lambda/ InP cavity. 1.5 periods of n- and p-InGaAsP/InP DBRs are also grown on n- and p-sides of this cavity. We selectively etched one and two quarter-wavelength layers of the n-InGaAsP/InP partial DBR through a photoresist mask with 50 /spl mu/m circular openings.