Title :
Postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate
Author :
Jo, M. ; Yasuhara, N. ; Sugawara, Y. ; Kawamoto, K. ; Fukatsu, S.
Author_Institution :
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
We have studied postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate. A sharp line associated with {311} defects dominates the PL spectra when annealed at above 600 °C.
Keywords :
III-V semiconductors; annealing; gallium compounds; internal stresses; photoluminescence; semiconductor quantum dots; GaSb; photoluminescence; postgrowth annealing; silicon-on-insulator substrate; strained GaSb quantum dots; Annealing; Capacitive sensors; Fabrication; Light emitting diodes; Photoluminescence; Quantum dots; Silicon on insulator technology; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416691
