DocumentCode
2956151
Title
Postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate
Author
Jo, M. ; Yasuhara, N. ; Sugawara, Y. ; Kawamoto, K. ; Fukatsu, S.
Author_Institution
Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
121
Lastpage
123
Abstract
We have studied postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate. A sharp line associated with {311} defects dominates the PL spectra when annealed at above 600 °C.
Keywords
III-V semiconductors; annealing; gallium compounds; internal stresses; photoluminescence; semiconductor quantum dots; GaSb; photoluminescence; postgrowth annealing; silicon-on-insulator substrate; strained GaSb quantum dots; Annealing; Capacitive sensors; Fabrication; Light emitting diodes; Photoluminescence; Quantum dots; Silicon on insulator technology; Substrates; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416691
Filename
1416691
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