Title :
Luminescence properties of Ge quantum dots produced by MBE at different temperatures
Author :
Larrson, M. ; Eflving, A. ; Hussain, M.I. ; Holtz, P.O. ; Ni, W.X.
Author_Institution :
Dept. of Phys. & Measurement Technol., Linkoping Univ., Sweden
fDate :
29 Sept.-1 Oct. 2004
Abstract :
The influence of the growth temperature on the structural and optical properties of Ge quantum dots in Si has been studied. We show that intermixing of Si in the dots strongly affect the band alignments.
Keywords :
elemental semiconductors; germanium; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; Ge; Ge quantum dots; MBE; Si intermixing; band alignments; growth temperature; luminescence; Atom optics; Atomic force microscopy; Capacitive sensors; Luminescence; Molecular beam epitaxial growth; Optical microscopy; Quantum dots; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416693
