DocumentCode :
295621
Title :
Confinement dimensionality and nonradiative recombination lifetime of carriers in micro-fabricated semiconductors
Author :
Nambu, Yoshihiro ; Kohmoto, Shigeru ; Asakawa, Kiyoshi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume :
1
fYear :
1995
fDate :
30-31 Oct 1995
Firstpage :
79
Abstract :
In summary, we have calculated the size-dependent nonradiative carrier lifetime taking carrier confinement dimensionality into account. This calculation will enables us to discuss required value of S to obtain low threshold quantum wire/dot (QWR/D) lasers clearly
Keywords :
carrier lifetime; laser theory; quantum well lasers; semiconductor quantum dots; semiconductor quantum wires; carrier confinement dimensionality; carrier lifetime; confinement dimensionality; laser theory; low threshold; micro-fabricated semiconductors; nonradiative recombination lifetime; quantum dot lasers; quantum wire lasers; size-dependent nonradiative carrier lifetime; Boundary conditions; Carrier confinement; Charge carrier density; Charge carrier lifetime; Equations; Etching; Fabrication; Microstructure; Shape; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
Type :
conf
DOI :
10.1109/LEOS.1995.484517
Filename :
484517
Link To Document :
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