• DocumentCode
    2956238
  • Title

    Si:Er-based light emitting diodes for optoelectronic applications grown with sublimation MBE technique

  • Author

    Nik, Z. F Krasil ; Kuznetsov, V.P. ; Remizov, D.Yu. ; Shmagin, V.B.

  • Author_Institution
    Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    127
  • Lastpage
    129
  • Abstract
    Various types of Si:Er-based LEDs grown with sublimation variant of traditional MBE (SMBE) technique are examined. The effect of breakdown nature on Er-related EL intensity and excitation efficiency is also investigated.
  • Keywords
    electroluminescence; elemental semiconductors; erbium; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; silicon; sublimation; EL intensity; Er:Si; Si:Er-based light emitting diodes; excitation efficiency; sublimation MBE; Breakdown voltage; Detectors; Electric breakdown; Erbium; Indium gallium arsenide; Light emitting diodes; P-n junctions; Pulse amplifiers; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416696
  • Filename
    1416696
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2956238