DocumentCode
295624
Title
The practical Hall elements as magnetic sensors by thin film technology
Author
Shibasaki, Ichiro
Author_Institution
Corp. Res. & Dev. Adm., Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
85
Abstract
InSb thin films produced by vacuum deposition, Si-doped InAs thin films and InAs deep quantum wells with barrier layers lattice matched to InAs by molecular beam epitaxy were applied to Hall elements as practical magnetic sensors
Keywords
Hall effect transducers; III-V semiconductors; indium compounds; magnetic sensors; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; semiconductor thin films; silicon; vacuum deposition; InAs; InAs deep quantum wells; InAs:Si; InSb; InSb thin films; Si-doped InAs thin films; barrier layers; magnetic sensors; molecular beam epitaxy; practical Hall elements; thin film technology; vacuum deposition; Gallium arsenide; Indium tin oxide; Magnetic films; Magnetic sensors; Molecular beam epitaxial growth; Substrates; Temperature dependence; Testing; Thin film sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484520
Filename
484520
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