Title :
The practical Hall elements as magnetic sensors by thin film technology
Author :
Shibasaki, Ichiro
Author_Institution :
Corp. Res. & Dev. Adm., Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan
Abstract :
InSb thin films produced by vacuum deposition, Si-doped InAs thin films and InAs deep quantum wells with barrier layers lattice matched to InAs by molecular beam epitaxy were applied to Hall elements as practical magnetic sensors
Keywords :
Hall effect transducers; III-V semiconductors; indium compounds; magnetic sensors; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; semiconductor thin films; silicon; vacuum deposition; InAs; InAs deep quantum wells; InAs:Si; InSb; InSb thin films; Si-doped InAs thin films; barrier layers; magnetic sensors; molecular beam epitaxy; practical Hall elements; thin film technology; vacuum deposition; Gallium arsenide; Indium tin oxide; Magnetic films; Magnetic sensors; Molecular beam epitaxial growth; Substrates; Temperature dependence; Testing; Thin film sensors; Transistors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484520
