DocumentCode :
2956255
Title :
Improved closed-form expressions for S-parameters of BJTs using modified Gummel-Poon model
Author :
Nadeem, Ahmed E. ; Eisenstadt, William R.
Author_Institution :
Dept. of Avionics Eng., Nat. Univ. of Sci. & Technol., Risalpur
fYear :
2003
fDate :
9-9 Dec. 2003
Firstpage :
202
Lastpage :
207
Abstract :
Noticeable differences particularly in phase were observed when closed-form expressions reported earlier were employed to predict small-signal S-parameters for the packaged devices. With improved close-form expressions presented in this paper, the overall situation both in terms of magnitude and phase has improved significantly by adding extrinsic base-to-collector capacitance. The difference in magnitude between measured and predicted using a modified Gummel-Poon model has reduced from 4 dB to less than 2 dB. The error between measure and calculated phase is no more than 8 degrees at any point whereas the expressions based on the intrinsic model greatly underestimated the phase for packaged devices
Keywords :
S-parameters; bipolar transistor circuits; semiconductor device models; semiconductor device packaging; BJT; closed-form expressions; device model; extrinsic base-to-collector capacitance; modified Gummel-Poon model; packaged devices; small-signal S-parameters; Closed-form solution; Educational institutions; Equations; Frequency measurement; Hybrid junctions; Matrices; Parasitic capacitance; Phase measurement; Predictive models; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multi Topic Conference, 2003. INMIC 2003. 7th International
Conference_Location :
Islamabad
Print_ISBN :
0-7803-8183-1
Type :
conf
DOI :
10.1109/INMIC.2003.1416697
Filename :
1416697
Link To Document :
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