DocumentCode
2956255
Title
Improved closed-form expressions for S-parameters of BJTs using modified Gummel-Poon model
Author
Nadeem, Ahmed E. ; Eisenstadt, William R.
Author_Institution
Dept. of Avionics Eng., Nat. Univ. of Sci. & Technol., Risalpur
fYear
2003
fDate
9-9 Dec. 2003
Firstpage
202
Lastpage
207
Abstract
Noticeable differences particularly in phase were observed when closed-form expressions reported earlier were employed to predict small-signal S-parameters for the packaged devices. With improved close-form expressions presented in this paper, the overall situation both in terms of magnitude and phase has improved significantly by adding extrinsic base-to-collector capacitance. The difference in magnitude between measured and predicted using a modified Gummel-Poon model has reduced from 4 dB to less than 2 dB. The error between measure and calculated phase is no more than 8 degrees at any point whereas the expressions based on the intrinsic model greatly underestimated the phase for packaged devices
Keywords
S-parameters; bipolar transistor circuits; semiconductor device models; semiconductor device packaging; BJT; closed-form expressions; device model; extrinsic base-to-collector capacitance; modified Gummel-Poon model; packaged devices; small-signal S-parameters; Closed-form solution; Educational institutions; Equations; Frequency measurement; Hybrid junctions; Matrices; Parasitic capacitance; Phase measurement; Predictive models; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Multi Topic Conference, 2003. INMIC 2003. 7th International
Conference_Location
Islamabad
Print_ISBN
0-7803-8183-1
Type
conf
DOI
10.1109/INMIC.2003.1416697
Filename
1416697
Link To Document