Title :
New solar cells using Ge dots embedded in Si PIN structures
Author :
Usami, Noritaka ; Arnold, A. ; Fujiwara, Kozo ; Nakjima, K. ; Yokoyama, Takashi ; Shiraki, Yasuhiro
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.
Keywords :
elemental semiconductors; germanium; photovoltaic cells; photovoltaic effects; semiconductor quantum dots; silicon; solar cells; Ge dots; Ge-Si; Si-based PIN solar cells; photovoltaic properties; Capacitive sensors; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Quantum computing; Quantum dots; Radiative recombination; Solar power generation; Spontaneous emission; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416698
