Degradation of resonant frequency in high-speed quantum well lasers: effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape

We present a theoretical model to investigate the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the modulation response in quantum well lasers. We find that the degradation of the resonant frequency that limits the modulation bandwidth of QW lasers results from the enhancement of carrier escape processes by the effect of excess carrier heating. This excess carrier heating is due to the finite lifetime of longitudinal optical phonons (hot phonon effects)