Ultralow threshold 1.3-μm strained-QW lasers for high-speed optical interconnections

Author

Uomi, K. ; Tsuchiya, T. ; Kawano, T. ; Nakahara, K. ; Niwa, A. ; Oishi, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

105

Abstract

A monolithic semiconductor laser array on a p-type substrate with low threshold current and uniform characteristics, is required for parallel high-speed optical interconnections. The calculated results indicate that the threshold current should be lower than about 3.0, 1.4, and 0.7 mA at 25°C for 200 and 500 Mbit/s and 1 Gbit/s applications, respectively, to get an error-free transmission at 850 °C with a shorter turn-on delay time. This paper fully reviews the ultralow threshold properties of our 1.3 μm strained-multi-quantum-well (MQW) laser

Keywords

high-speed optical techniques; laser beams; laser cavity resonators; optical interconnections; optical transmitters; quantum well lasers; semiconductor laser arrays; 0.7 mA; 1 Gbit/s; 1.3 mum; 1.4 mA; 200 Mbit/s; 25 C; 3 mA; 500 Mbit/s; 85 C; error-free transmission; high-speed optical interconnections; monolithic semiconductor laser array; p-type substrate; strained-QW lasers; strained-multi-quantum-well laser; threshold current; turn-on delay time; ultralow threshold properties; uniform characteristics; Delay effects; Electrons; Laser modes; Laser theory; Optical arrays; Optical interconnections; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484530

Filename

484530