High-speed InP-based digital optical switches

Author

Khan, M. Nim

Author_Institution

AT&T Bell Labs., Whippany, NJ, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

114

Abstract

Digital optical switches (DOS) are very desirable from a practical point of view because they can provide flexibility for changing polarization, wavelength, temperature, and to some extent the device geometrical parameters, without sacrificing crosstalk performance. In this paper, a new InGaAsP-InP QW tapered Y-branch digital optical switch is proposed which has been demonstrated to be fabrication-tolerant, compact, low loss, and has high speed switching capability

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; optical crosstalk; optical losses; optical waveguides; semiconductor quantum wells; InGaAsP-InP; InGaAsP-InP QW tapered Y-branch digital optical switch; changing polarization; changing temperature; changing wavelength; compact; crosstalk performance; device geometrical parameters; fabrication-tolerant; flexibility; high speed switching capability; high-speed InP-based digital optical switches; low loss; Crosstalk; Design optimization; Fabrication; III-V semiconductor materials; Optical switches; Optical waveguides; Propagation losses; Testing; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484533

Filename

484533