SHG in photonic band gap semiconductor structure

Summary form only given. Photonic band gap´s (PBG´s) are layered structures showing strong transmission or reflection resonances, the most interesting of which are located near the band gap edge, where an enhancement of the electromagnetic density of modes (DOM) make these devices extremely promising for both linear and nonlinear optical applications. Recently the use of such PBG´s was suggested in order to increase the efficiency of second harmonic generating devices, via the increase of fundamental (F) and second harmonic (SH) DOM´s and a significant change on the effective refraction index at F and SH, that could be exploited to meet the phase-matching condition. In order to demonstrate this properties a semiconductor PBG was designed and fabricated. The PBG is a Bragg mirror structure growth by MOVPE. The 30 period alternating layers are high/low second order nonlinear materials, namely GaAlAs-GaAlAs.