Title :
Low polarization dependent, low chirp, high speed electroabsorption modulator using high-mesa ridge structure with polyimide
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Application of an electroabsorption modulator in future high bit-rate optical transmission systems will be mainly data cording through low wavelength chirping of it. In addition, low polarization dependency of attenuation recently has developed other applications: in-line gating and receiver side optical demultiplexing. This paper reports InGaAsP-InP electro-optical modulators with low polarization dependence, low chirping and high speed modulation capability
Keywords :
III-V semiconductors; demultiplexing; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fibre polarisation; optical waveguides; ridge waveguides; InGaAsP-InP; InGaAsP-lnP electro-optical modulators; data cording; electroabsorption modulator; high bit-rate optical transmission systems; high speed electroabsorption modulator; high speed modulation capability; high-mesa ridge structure; in-line gating; low chirp; low polarization dependence; low polarization dependency; low wavelength chirping; polyimide; receiver side optical demultiplexing; Absorption; Chirp modulation; High speed optical techniques; Optical attenuators; Optical modulation; Optical polarization; Optical receivers; Optical sensors; Photonic band gap; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484537
