Analysis and fabrication of high-contrast InGaAsP/InP Mach-Zehnder modulators for use at 1.55 μm wavelength

Author

Fetterman, M. ; Chao, C.P. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

126

Abstract

Summary form only given. A multiple quantum well InGaAsP-InP Mach-Zehnder (MZ) interferometer with a high-contrast ratio of >40 dB, and a low voltage-length product of 1.8 V-mm, is demonstrated and analyzed. Using the Lanczos-Helmhortz beam propagation method (LHBPM), we find that the linear and quadratic electrooptic coefficients for lnGaAsP quantum wells

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical fabrication; optical waveguide theory; semiconductor quantum wells; 1.55 μm wavelength; 1.55 mum; InGaAsP-InP; Lanczos-Helmhortz beam propagation method; high-contrast InGaAsP/InP Mach-Zehnder modulators; high-contrast ratio; linear electrooptic coefficients; lnGaAsP quantum wells; low voltage-length product; multiple quantum well ZnGaAsP-InP Mach-Zehnder interferometer; quadratic electrooptic coefficients; Chaos; Indium phosphide; Light emitting diodes; Optical device fabrication; Optical modulation; Optical propagation; Optical sensors; Optical waveguides; Photonics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484539

Filename

484539