Title :
Electrorefraction type optical intensity modulator without interferometric device
Author :
Silva, M. T Camargo ; Calligaris, A.O., Jr.
Author_Institution :
Dept. of Electr. Eng., Sao Paulo Univ., Brazil
Abstract :
It is reported an InGaAsP-InP MQW electrorefraction optical intensity modulator without interferometric device for 1.55 μm. Extinction ratio of 17.0 dB at 3.0 V, insertion loss of 2.0 dB, bandwidth of 30 GHz, and 4 Å of optical tuning have been predicted for a device 220 μm long. The modulator can also be fabricated in tandem for application in WDM systems
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical losses; semiconductor quantum wells; tuning; wavelength division multiplexing; 1.55 mum; 2 dB; 220 mum; 3 V; 30 GHz; InGaAsP-InP; InGaAsP-InP MQW electrorefraction optical intensity modulator; WDM systems; bandwidth; electrorefraction type optical intensity modulator; extinction ratio; insertion loss; optical tuning; Bandwidth; Extinction ratio; Insertion loss; Intensity modulation; Optical devices; Optical interferometry; Optical losses; Optical modulation; Optical tuning; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484540
