Title :
Recent progresses of silicon-based optoelectronic devices for application in fiber communication
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5 μm SiGe photodetector with quantum structures, 1 GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper.
Keywords :
elemental semiconductors; light emitting diodes; optical communication equipment; optical filters; optical materials; optical modulation; optical switches; optical tuning; photodetectors; silicon; silicon compounds; silicon-on-insulator; MOS optical modulator; SOI optical switch matrix; Si; Si diode; SiGe photodetector; fiber communication; wavelength tunable filter; Diodes; Germanium silicon alloys; Optical devices; Optical fiber communication; Optical fiber devices; Optical modulation; Optoelectronic devices; Photodetectors; Silicon germanium; Stimulated emission;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416704
