• DocumentCode
    295647
  • Title

    Monolithic integration of lateral-electrode laser and waveguide devices in GaAs/AlGaAs

  • Author

    Okamoto, Kazuya ; Yamada, Atsushi ; Irita, Takeshi ; Nakano, Yoshiaki ; Tada, Kunio

  • Author_Institution
    Central Res. Lab., Nikon Corp., Tokyo, Japan
  • Volume
    1
  • fYear
    1995
  • fDate
    30-31 Oct 1995
  • Firstpage
    131
  • Abstract
    A monolithically integrated diode laser with waveguide devices has been described theoretically and experimentally. The lateral-electrode ridge-guided Fabry-Perot or DFB laser is coupled by the evanescent field to a strip loaded single-mode waveguide. The waveguide cladding consists of two layers: the upper layer is n-doped for a ground contact of the laser section, and the lower layer is nondoped to achieve low loss propagation in the waveguide. This device will be useful as a built-in component for various optical measurement equipments
  • Keywords
    III-V semiconductors; aluminium compounds; claddings; distributed feedback lasers; electrodes; gallium arsenide; integrated optoelectronics; optical fabrication; optical planar waveguides; optical variables measurement; ridge waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; GaAs/AlGaAs; built-in component; diode laser; evanescent field; ground contact; laser section; lateral-electrode laser; lateral-electrode ridge-guided Fabry-Perot laser; low loss propagation; lower layer; monolithic integration; monolithically integrated; n-doped; optical measurement equipment; strip loaded single-mode waveguide; upper layer; waveguide cladding; waveguide devices; Diode lasers; Fabry-Perot; Laser theory; Monolithic integrated circuits; Optical coupling; Optical waveguide theory; Optical waveguides; Strips; Waveguide lasers; Waveguide theory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-2450-1
  • Type

    conf

  • DOI
    10.1109/LEOS.1995.484803
  • Filename
    484803