Title :
Monolithic integration of lateral-electrode laser and waveguide devices in GaAs/AlGaAs
Author :
Okamoto, Kazuya ; Yamada, Atsushi ; Irita, Takeshi ; Nakano, Yoshiaki ; Tada, Kunio
Author_Institution :
Central Res. Lab., Nikon Corp., Tokyo, Japan
Abstract :
A monolithically integrated diode laser with waveguide devices has been described theoretically and experimentally. The lateral-electrode ridge-guided Fabry-Perot or DFB laser is coupled by the evanescent field to a strip loaded single-mode waveguide. The waveguide cladding consists of two layers: the upper layer is n-doped for a ground contact of the laser section, and the lower layer is nondoped to achieve low loss propagation in the waveguide. This device will be useful as a built-in component for various optical measurement equipments
Keywords :
III-V semiconductors; aluminium compounds; claddings; distributed feedback lasers; electrodes; gallium arsenide; integrated optoelectronics; optical fabrication; optical planar waveguides; optical variables measurement; ridge waveguides; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; GaAs/AlGaAs; built-in component; diode laser; evanescent field; ground contact; laser section; lateral-electrode laser; lateral-electrode ridge-guided Fabry-Perot laser; low loss propagation; lower layer; monolithic integration; monolithically integrated; n-doped; optical measurement equipment; strip loaded single-mode waveguide; upper layer; waveguide cladding; waveguide devices; Diode lasers; Fabry-Perot; Laser theory; Monolithic integrated circuits; Optical coupling; Optical waveguide theory; Optical waveguides; Strips; Waveguide lasers; Waveguide theory;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484803
