Monolithically integrated 2×2 InGaAsP/InP laser amplifier gate switch arrays using RIE and MOVPE

Summary form only given. The switch arrays operating at 1.3 μm wavelength are fabricated integrating passive and active InGaAsP-InP semiconductor waveguides by a stable fabrication process based on metal organic vapor phase epitaxy (MOVPE) and reactive ion etching (RIE). After 1st growth of active layers and RIE etching of passive parts, the passive layers were grown for butt-coupling. The passive and active waveguides were prepared by RIE process. We also achieved the integrated amplifiers with the high performance and good uniformity by the same fabrication method